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Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

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3 Author(s)
Ishiwara, Hiroshi ; Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan ; Tamba, Akihiro ; Furukawa, S.

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Lateral solid phase epitaxy (L‐SPE) of amorphous Si (a‐Si) films onto nonplanar SiO2 patterns on Si(100) substrates was investigated. The patterns were formed by local oxidation of silicon (LOCOS) and the thickness of the SiO2 films ranged from 60 to 470 nm. The L‐SPE characteristics similar to those for planar patterns were observed in dense a‐Si films prepared by high‐temperature vacuum deposition and subsequent ion implantation. The maximum L‐SPE lengths onto the LOCOS patterns were 4.5, 6.5, and 44 μm in undoped, B‐doped, and P‐doped samples, respectively.

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Applied Physics Letters  (Volume:48 ,  Issue: 12 )