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Chloride vapor phase epitaxial growth of high‐purity GaInP

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4 Author(s)
Hoshino, Masataka ; Fujitsu Laboratories, Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan ; Kodama, Kunihiko ; Kitahara, Kuninori ; Ozeki, Masashi

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High‐purity GaInP alloy was grown by chloride vapor phase epitaxy (Ga/In/PCl3/H2 system) with two separate metal source regions. The alloy composition could be precisely controlled by using separate regions for Ga and In metals. From the photoluminescence and Hall effect analysis, epitaxial layers lattice matched to GaAs substrates showed high emission efficiency, the full width at half‐maximum of the free‐exciton luminescence was as narrow as 7.4 meV at 77 K (3.8 meV at 4.2 K), and the low impurity concentration was below 1.5×1015 cm-3.

Published in:

Applied Physics Letters  (Volume:48 ,  Issue: 12 )

Date of Publication:

Mar 1986

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