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Blue luminescence of a ZnSe‐ZnS0.1Se0.9 strained‐layer superlattice on a GaAs substrate grown by low‐pressure organometallic vapor phase epitaxy

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3 Author(s)
Fujita, Shigeo ; Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan ; Matsuda, Yoshinobu ; Sasaki, Akio

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The ZnSe‐ZnS0.1Se0.9 strained‐layer superlattice (SLS) with an average lattice parameter equal to that of GaAs has been grown on a (100)GaAs substrate at a growth temperature of 400 °C by a low‐pressure organometallic vapor‐phase epitaxy using dimethylzinc, H2Se, and H2S as sources. The SLS’s exhibited strong blue photoluminescence with a single emission peak, while ZnSe epitaxial layers grown directly on the GaAs substrates showed several peaks related to some defects or impurities together with excitonic emission lines at a near band edge region. Intense blue emission was also observed in ZnS0.05Se0.95 layers grown on the top of the SLS structures. Low‐temperature photoluminescence has been investigated to examine the influence of the structural variation on the properties of these layers.

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Applied Physics Letters  (Volume:47 ,  Issue: 9 )