Spill‐over effects in planar doped barrier devices

We demonstrate that electron spill over from n⁺ regions into an i region in planar doped barrier devices strongly affects potential distribution and a barrier height. We obtain an analytical solution for the potential distribution which takes the spill‐over effects into account and shows that the barrier height may be considerably higher than follows from a simple geometrical model. The obtained formulas may be used in the design of the planar doped barrier devices.