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We report on measurements of the spectral and the temporal response of AlGaAs/GaAs p‐i‐n photodetectors with superlattice intrinsic regions grown by molecular beam epitaxy. The feasibility for high‐speed applications is demonstrated by a time constant limited impulse response of 200 ps (full width at half‐maximum) when excited near the band edge with 100 ps optical pulses. We observed the theory‐predicted and recently verified voltage tunability of the band edge with clearly resolved excitonic resonances. The responsivity was measured to be 0.2 A/W.