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We show that by employing gain tailoring in a broad area semiconductor laser we achieve fundamental lateral mode operation with a diffraction‐limited single‐lobed far‐field pattern. We demonstrate a tailored gain broad area laser 60 μm wide which emits 450 mW per mirror into a stable, single‐lobed far‐field pattern 3 1/2° wide at 5.3 I
Published in:
Applied Physics Letters
(Volume:47
,
Issue:
6
)
Date of Publication: Sep 1985
- Page(s):
- 560 - 562
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.96070
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Sep 1985
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