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We have been able to fabricate structures which consist of a thin (∼10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625–700 °C) due to the nonreactive nature of W with respect to GaAs. Reflective high‐energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer.
Published in:
Applied Physics Letters
(Volume:47
,
Issue:
11
)
Date of Publication: Dec 1985
- Page(s):
- 1187 - 1189
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.96322
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Dec 1985
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