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Investigation of short time donor annihilation in silicon

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4 Author(s)
OMara, W.C. ; Rose Associates, 111 Main Street, Los Altos, California 94022 ; Parker, J.E. ; Butler, Paul ; Gat, Arnon

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We have investigated the annealing of the oxygen donor in silicon in the temperature range 550–700 °C using Heatpulse lamp annealing in the time range of 1–1200 s. As‐grown silicon wafers can contain donors due to cooling through 450 °C as a part of the crystal growth process. A 1‐s anneal at 650 °C is sufficient to eliminate these donors completely. Intentionally created donors were annealed in order to determine reaction kinetics. A second‐order process involving the donor plus another species fits the data, with an Arrhenius behavior as a function of temperature. The activation energy for this process is 1.7 eV.

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Applied Physics Letters  (Volume:46 ,  Issue: 3 )