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Spatial distribution of radiation‐induced interface traps under the gate of an Al/SiO2/Si capacitor

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3 Author(s)
Zekeriya, Viktor ; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 ; Wong, Amy ; Ma, T.P.

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The radiation‐induced interface trap density in an Al/SiO2/Si capacitor has been found to exhibit a systematic lateral variation under the gate area as one probes from the edge toward the center of the device. This spatial variation correlates well with the lateral distribution of the gate Al induced interfacial stresses, and the results provide further support to one earlier conclusion that the metal‐oxide‐Si device radiation sensitivity depends strongly on its interfacial stress distribution.

Published in:

Applied Physics Letters  (Volume:46 ,  Issue: 1 )

Date of Publication:

Jan 1985

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