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626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

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3 Author(s)
Kobayashi, K. ; Opto‐Electronics Research Laboratories, NEC Corporation, 4‐1‐1 Miyazaki, Miyamae‐ku, Kawasaki, Japan ; Hino, Isao ; Suzuki, Tohru

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Room‐temperature pulsed laser operation of (Al0.55Ga0.45)0.5In0.5P /(Al0.17Ga0.83)0.5In0.5P / (Al0.55Ga0.45)0.5In0.5P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm2 for a diode with a 20‐μm‐wide and 200‐μm‐long stripe.

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Applied Physics Letters  (Volume:46 ,  Issue: 1 )