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Growth of amorphous Ti2O3 layers by laser‐induced oxidation

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2 Author(s)
Merlin, R. ; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 ; Perry, T.A.

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Amorphous Ti2O3 films with thicknesses ≳103 Å have been obtained by cw laser irradiation of Ti50Zr10Be40 exposed to low oxygen pressures. In contrast, thermal oxidation of (nonirradiated) samples reveals scales composed of crystalline oxides. Raman scattering, x‐ray, and electron microscopy data on the layers are reported. It is suggested that irradiation leads to an enhanced oxidation rate preventing crystallization. Possible mechanisms of enhancement are discussed.

Published in:
Applied Physics Letters  (Volume:45 ,  Issue: 8 )

Date of Publication: Oct 1984

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