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Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors

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6 Author(s)
Shibata, J. ; Central Research Laboratory, Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka 570, Japan ; Nakao, Ichiro ; Sasai, Yoichi ; Kimura, Soichi
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A monolithic integration of an InGaAsP laser diode together with current supplying circuit on a single InP substrate has been achieved. Heterojunction bipolar transistors (HBT’s) have been constructed utilizing the burying epitaxial layers of the buried heterostructure laser diode. The laser has been successfully modulated up to 1.6 GHz through the HBT’s driving circuit with sinusoidal electrical signal.

Published in:

Applied Physics Letters  (Volume:45 ,  Issue: 3 )