High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition

Electrical properties of 3C‐SiC layers, epitaxially grown on silicon by chemical vapor deposition, have been investigated at the temperatures between room temperature and 850 °C. In this temperature range, the electron mobility changes with temperature as μH∼T^-1.2∼-1.4. The weaker temperature dependence of mobility and the larger mobilities compared with other polytypes of SiC suggest that 3C‐SiC is a promising material for devices operated at high temperatures.