By Topic

Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a‐Si:H diodes by photoemission with synchrotron radiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Fortunato, G. ; IESS‐CNR, via Cineto Romano 42, 00156 Rome, Italy ; DAmico, A. ; Coluzza, C. ; Sette, F.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.94967 

The Pd/SiOx/a‐Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence‐band discontinuity and the built‐in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation.

Published in:

Applied Physics Letters  (Volume:44 ,  Issue: 9 )