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Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy

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6 Author(s)
Sanada, T. ; Fujitsu limited, 1677, Ono, Atsugi 243‐01, Japan ; Yamakoshi, S. ; Wada, O. ; Fujii, T.
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AlGaAs/GaAs multiquantum well lasers and GaAs metal‐semiconductor field‐effect transistors have been monolithically integrated on a semi‐insulating GaAs substrate by using molecular beam epitaxy. This integrated laser has exhibited cw operation with the low threshold current of 20 mA at room temperature. The laser/field‐effect transistor (FET) characteristics, such as a linear control of laser output power by changing the FET gate voltage, have been confirmed. A conversion ratio of laser output power to FET gate voltage has been measured to be as high as 3.3 mW/V. Rise and fall times of 1 ns have been demonstrated.

Published in:

Applied Physics Letters  (Volume:44 ,  Issue: 3 )

Date of Publication:

Feb 1984

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