By Topic

Bistability in coupled cavity semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Dutta, N.K. ; AT & T Bell Laboratories, Murray Hill, New Jersey 07974 ; Agrawal, G.P. ; Focht, M.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.94592 

Experimental results on bistable operation of coupled cavity semiconductor lasers are presented. The light level at the upper and lower states can be controlled by varying the injection current. A model calculation of the coupled cavity laser system shows that the bistability is due to nonlinearities associated with above threshold gain saturation. Our results show that a coupled cavity laser can exhibit bistability at all temperatures and, in addition, the size of the ‘‘hysteresis loop’’ can be easily controlled by varying the injection current. These results are significant for a practical bistable optical device.

Published in:

Applied Physics Letters  (Volume:44 ,  Issue: 1 )