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A one‐dimensional theory of laser annealed polycrystalline silicon thin‐film transistors operating in the inverted enhancement mode is described. The conductance versus gate voltage relations are characterized by two electronic parameters,namely, the charge transferred at zero‐gate voltage and the interface state density. In addition to the determination of these parameter values for three actual devices of different doping levels, this analysis also reveals the roles of each parameter and suggests optimal values of these parameters for devices.