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Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane

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4 Author(s)
Meunier, M. ; Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 ; Gattuso, T.R. ; Adler, D. ; Haggerty, J.S.

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The electronic properties of hydrogenated amorphous silicon (a‐Si:H) produced by laser‐induced chemical vapor deposition of silane are reported. Spin density and both optical gap and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported. Film properties are superior to those produced by conventional chemical vapor deposition of silane.

Published in:

Applied Physics Letters  (Volume:43 ,  Issue: 3 )

Date of Publication:

Aug 1983

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