By Topic

Recombination centers identification in very thin silicon epitaxial layers via lifetime measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Daliento, S. ; Dept. of Electron. Eng., Naples Univ., Italy ; Sanseverino, A. ; Spirito, P. ; Sarro, P.M.
more authors

A new test structure for the recombination lifetime profile measurement has been designed and applied, for the first time, to characterize very thin (4 μm) silicon epitaxial layers. The results of our analysis have shown how the lifetime behavior, at room temperature, is clearly position dependent its value being influenced by different recombination centers. Moreover, two distinct recombination centers have been identified, the first one related to the dopant (arsenic in our case) and the second one induced by the process steps required to realize the test structure itself.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 3 )