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InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices

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3 Author(s)
Chen, K.J. ; NTT LSI Labs., Kanagawa, Japan ; Maezawa, K. ; Yamamoto, M.

MOBILEs (monostable-bistable transition logic elements), which have the advantages of multiple-input and multiple-function, are demonstrated in InP-based material system using monolithic integration of resonant-tunneling diodes and high electron mobility transistors. The high peak current density, high peak-to-valley ratio, and high transconductance, which are required for high-performance MOBILEs, are demonstrated in this InP-based material system. A fabricated MOBILE with three-input gates having 1:2:4 width ratio can perform weighted-sum threshold logic operation, and has a wide range of applications in new computing architectures, such as neural networks.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 3 )