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High speed p-type SiGe modulation-doped field-effect transistors

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6 Author(s)
Arafa, M. ; Dept. of Electr. Eng., Illinois Univ., Urbana, IL, USA ; Fay, P. ; Ismail, K. ; Chu, J.O.
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We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-/spl mu/m and 1-/spl mu/m gate-lengths having unity current-gain cut-off frequencies (f/sub T/) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g/sub m/) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-/spl mu/m gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few /spl mu/A/mm at room temperature and a few nA/mm at 77 K.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 3 )

Date of Publication:

March 1996

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