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Hydrogen passivation of defects in silicon ribbon grown by the edge‐defined film‐fed growth process

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4 Author(s)
Hanoka, J.I. ; Mobil Solar Energy Corporation, Waltham, Massachusetts 02254 ; Seager, C.H. ; Sharp, D.J. ; Panitz, J.K.G.

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Electrically active defects in edge‐defined film‐fed grown silicon ribbon solar cells have been passivated using a hydrogen plasma from a Kaufman ion source. Significant improvements in solar cell efficiency for both low diffusion length starting material (∼20 μm) and high diffusion length (∼50 μm) material have been obtained. For the former, passivation has produced solar cell efficiency improvements as high as 41% and in the case of the latter, solar cell efficiencies as high as 14.5% (AM1) have been obtained. Electron beam induced current micrographs are shown which indicate near total defect passivation for at least the top 9 μm of the solar cell.

Published in:

Applied Physics Letters  (Volume:42 ,  Issue: 7 )

Date of Publication:

Apr 1983

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