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Gate length effect on the RTS noise amplitude in SOI MOSFETs

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2 Author(s)
E. Simoen ; IMEC, Leuven, Belgium ; C. Claeys

The Random Telegraph Signal (RTS) noise amplitude in Silicon-on-Insulator MOSFETs is studied as a function of the gate length, by adding a second transistor in series. Different types of behavior can be distinguished, pointing toward a different origin of the related trapping centers. It is shown that in linear operation, the RTS amplitude and the corresponding low-frequency noise peak magnitude normally scales with 1/L. However, an increase with device length can also be found when the noise peaks of two RTSs add up. For RTSs occurring in the saturation regime, a complete elimination is observed for larger Ls, in support of the supposed film-related origin.

Published in:

IEEE Electron Device Letters  (Volume:17 ,  Issue: 4 )