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High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy

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2 Author(s)
Oron, M. ; Bell Laboratories, Holmdel, New Jersey 07733 ; Tamari, N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.93872 

Lasing properties of an InGaAsP (λ=1.3 μm) crescent‐shaped buried heterostructure laser are presented. The structure was grown by single step liquid phase epitaxy on a mesa substrate. High output power in pulsed operation (150 mW/facet) and high external differential quantum efficiency (60%) are realized in this structure even though there is no special layer for current blocking. Fundamental mode operation up to a power level of 30 mW/facet is found. These characteristics are attributed to the effect of the mesa on current flow and they demonstrate the importance of substrate topography on laser performance.

Published in:

Applied Physics Letters  (Volume:42 ,  Issue: 2 )