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Effect of p‐n junction position on the performance of InGaAsP light emitting diodes

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5 Author(s)
Temkin, H. ; Bell Laboratories, Murray Hill, New Jersey 07974 ; Joyce, W.B. ; Chin, A.K. ; DiGiuseppe, M.A.
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The power‐speed relationship of 1.3‐μm InGaAsP light emitting diodes is examined as a function of the p‐n junction position within the active layer. It is shown that a gradual displacement of the p‐n junction into the InGaAsP layer results in devices with increased speed and lower output power. To account for the experimental findings junction displacement is modeled in terms of both electron and hole injection.

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Applied Physics Letters  (Volume:41 ,  Issue: 8 )