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Preparation of surface silicon nitride films by low energy ion implantation

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4 Author(s)
Thomas, G.E. ; Philips Research Laboratories, Eindhoven, The Netherlands ; Beckers, L.J. ; Habraken, F.H.P.M. ; Kuiper, A.E.T.

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Surface silicon nitride layers have been formed on Si(100) crystals via high dose implantation of 1 keV N+ and 2 keV N+2 ions in ultrahigh vacuum. Auger electron spectroscopy depth profiles and Rutherford backscattering measurements indicate the formation of a relatively uniform layer having a composition near Si3N4 to a depth of approximately 70 Å. The current‐voltage characteristics of such implanted layers are inferior to those of standard Si3N4 layers.

Published in:

Applied Physics Letters  (Volume:41 ,  Issue: 1 )