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A simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas. Threshold currents as low as 9.0 mA have been obtained.
Published in:
Applied Physics Letters
(Volume:40
,
Issue:
7
)
Date of Publication: Apr 1982
- Page(s):
- 568 - 570
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.93182
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Apr 1982
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