Cart (Loading....) | Create Account
Close category search window

Electrical properties of single‐crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wang, K.L. ; Electrical Engineering Department, University of California at Los Angeles, California 90024Stanford Electronics Laboratories, Stanford, California 94305 ; Li, G.P. ; Sigmon, T.W.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The electrical evaluation of metal‐oxide‐semiconductor (MOS) capacitors fabricated on thin films formed by low‐temperature epitaxial crystallization of amorphized polysilicon layers on single‐crystal Si substrates is presented. Shallow dopant and deep‐level defect distributions are obtained using fast C(V) and deep‐level transient spectroscopy, respectively. The dominant deep‐level defects are observed to be at Ec -0.074 eV, Ec -0.15 eV, and Ec -0.46 eV. Both the shallow dopant and deep‐level defect distributions exhibit peak concentrations near the original poly/single‐crystal interface. These defects and impurities are attributed to gettering by oxygen of contaminant impurities. It is concluded from the data that these films are of suitable quality for MOS device fabrication, and techniques are suggested to further decrease the observed defect concentrations.

Published in:

Applied Physics Letters  (Volume:39 ,  Issue: 9 )

Date of Publication:

Nov 1981

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.