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Transient annealing with a graphite strip heater has been used to accomplish solid‐phase epitaxial recrystallization of amorphous layers produced in Si by implantation of 120‐keV As+ ions. For doses of 5×1014 or 2×1015 cm-2, annealing at 900–1000 °C for 10 s results in electrical activation comparable to that obtained by a conventional furnace anneal at 1000 °C for 30 min, but with negligible dopant redistribution. For a dose of 1×1016 cm-2, activation is slightly less than that of furnace‐annealed samples, but sheet resistance as low as 22 Ω/⧠ has been obtained by annealing at 1200 °C for 10 s. Mesa diodes fabricated on strip‐heater‐annealed samples exhibit good junction characteristics.