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Microstructures of furnace‐ and laser‐annealed silicon containing implanted oxygen and carbon were studied by transmission electron microscopy. Implanted oxygen atoms tend to cluster resulting in twins at the damaged regions, while dislocation loops and small precipitates were observed throughout in carbon‐implanted silicon after furnace annealing. A low density of dislocations was observed in the oxygen‐implanted, laser‐annealed, and subsequently heat‐treated silicon. All the atomic distributions reported in the previous paper were well correlated with the microstructure of the specimens.