Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.92116
Low‐temperature anodic oxidation in a ’’cold’’ plasma (multipole) of metals like Al or Ta through a thin calcia‐stabilized zirconia (CSZ) film is possible. Thick (≳300 nm) stoichiometric metal oxides are formed under the CSZ with high growth rates (20–30 nm/min). Anodization of bare metals under similar plasma conditions leads to very low oxidation rates (≪1 nm/min). The CSZ film, which acts as a selective oxygen filter, has thus greatly enchanced the oxidation rate. Low‐temperature (≪50 °C) plasma anodization of silicon (typical rates 2–3 nm/min) is also possible through a thin CSZ film.
Published in:
Applied Physics Letters
(Volume:38
,
Issue:
1
)
Date of Publication: Jan 1981
- Page(s):
- 33 - 35
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.92116
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jan 1981
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
