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Browse Journals & Magazines > Applied Physics Letters ...> Volume:37 Issue:3 Help

Studies of steam‐oxidized WSi2 by Auger sputter profiling

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4 Author(s)
Rouse, J. ; Stanford Electronics Laboratories, Stanford University, Stanford, California 94305 ; Mohammadi, F. ; Helms, C.R. ; Saraswat, K.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.91915 

We have studied steam‐oxidized WSi2 films sputter deposited upon Si and SiO2 substrates using Auger sputter profiling. As previously reported, steam oxidation produces an SiO2 surface layer. Silicon is supplied to the growing SiO2 layer by the conversion of the WSi2 to W5Si3, and additional Si is supplied by diffusion through the WSi2 layer only for the case of a Si substrate. The W5Si3 is distributed throughout the silicide layer, but with slightly higher concentration at the SiO2‐silicide interface. This interface also contains an oxidized tungsten phase possibily is the form of a WxSiyOz compound.

Published in:
Applied Physics Letters  (Volume:37 ,  Issue: 3 )

Date of Publication: Aug 1980

Page(s):
305 - 307
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.91915
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 1980

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