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H‐ and He‐ion implantation has been used to increase the photoferroelectric image storage sensitivity of lead lanthanum zirconium titanate ceramics by factors of ∼10 and ∼30, respectively. The increased photosensitivity can be attributed primarily to implantation‐produced disorder, which increases the efficiency of carrier photoexcitation and trapping and reduces the exposure energy required to establish nonvolatile space‐charge fields. Implantation‐induced disorder may also contribute to a substantial increase in photoconductivity in the ion‐damaged near‐surface region.