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Static and dynamic properties of (InGa)As/GaAs quantum dot lasers

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14 Author(s)
N. Kirstaedter ; Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany ; O. Schmidt ; N. N. Ledentsov ; M. Grundmann
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Threshold current, polarization and carrier dynamics in (InGa)As/GaAs quantum dot (QD) structures are studied. Large T0 of 425 K, a low threshold current density of ~80 A cm-2 and an external quantum efficiency of 30% are measured between 50 K-120 K

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE  (Volume:1 )

Date of Conference:

30-31 Oct 1995