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Solid solubility of As in Si as determined by ion implantation and cw laser annealing

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5 Author(s)
Lietoila, A. ; Stanford Electronics Laboratories, Stanford, California 94305 ; Gibbons, J.F. ; Magee, T.J. ; Peng, J.
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Complete electrical activity was obtained by cw laser annealing of 7×1015 As/cm2 implanted into (100) Si at 100 keV. The peak concentration for these implantation conditions is 1.4×1021/cm3, both theoretically and experimentally. However, this peak concentration was found to be thermally unstable, relaxing to a value of 3×1020/cm3 in a period of less than 2 min at 900 °C. If the peak implanted concentration is below 3×1020/cm3, the electrical activation and crystal structure are unaffected by similar thermal processing. We conclude from these data that the solid solubility of As in Si at 900 °C is approximately 3×1020/cm3, which is almost an order of magnitude below the published value.

Published in:

Applied Physics Letters  (Volume:35 ,  Issue: 7 )

Date of Publication:

Oct 1979

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