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Observation of in situ annealing in hot ion‐implantation of nitrogen into AlxGa1-xAs (x=0.53)

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5 Author(s)
Makita, Yunosuke ; Electrotechnical Laboratory, Tanashi, Tokyo 188, Japan ; Nojiri, Hidetoshi ; Tsurushima, Toshio ; Tanoue, Hisao
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Photoluminescence measurements were carried out for indirect band‐gap Al0.53Ga0.47As crystals in which nitrogen ions were implanted at various elevated temperatures. It was found that samples implanted at temperatures higher than 525 °C exhibit characteristic emission bands associated with the nitrogen isoelectronic trap without any annealing treatments. This observation apparently shows that the substitutional procedure takes place simultaneously during implantation. We have also found that the substitutional mechanism is closely related with the formation of arsenic vacancies through which implanted atoms are located to the host arsenic sites.

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Applied Physics Letters  (Volume:35 ,  Issue: 3 )