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Current‐field characteristics of oxides grown from polycrystalline silicon

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4 Author(s)
Chenming Hu ; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 ; Shum, Ying ; Klein, Tom ; Lucero, Elroy

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.91032 

A new technique determined the J‐E characteristics of silicon dioxide grown from polycrystalline silicon with greatly improved sensitivity. More importantly, the current density was measured over a 10‐decade range without the problem of current drift or uncertainty about the field at the cathode surface due to charge trapping in the oxide. The apparent barrier height decreased with increasing electric field as if the barrier lowering was due to field enhancement at surface asperities of about 500 Å in size. The technique is applicable to other dielectrics where charge trapping presents difficulties to J‐E measurements.

Published in:

Applied Physics Letters  (Volume:35 ,  Issue: 2 )

Date of Publication:

Jul 1979

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