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Ellipsometric study of silicon implanted with boron ions in low doses

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4 Author(s)
Watanabe, K. ; Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan ; Miyao, M. ; Takemoto, I. ; Hashimoto, N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.90848 

Ellipsometry was applied to estimate crystal damage in silicon caused by boron‐ion implantation in low doses. A highly sensitive parameter for crystal damage is proposed which is derived from the extinction coefficient of the complex refractive index. Crystal damage caused by ion implantation at doses as low as 3×1011 cm-2 and the annealing effect on crystal damage of heat treatment in dry N2 ambient after ion implantation were clearly detected by the parameter.

Published in:

Applied Physics Letters  (Volume:34 ,  Issue: 8 )

Date of Publication:

Apr 1979

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