Referenced Items are not available for this document.
Summary form only given. The switch arrays operating at 1.3 μm wavelength are fabricated integrating passive and active InGaAsP-InP semiconductor waveguides by a stable fabrication process based on metal organic vapor phase epitaxy (MOVPE) and reactive ion etching (RIE). After 1st growth of active layers and RIE etching of passive parts, the passive layers were grown for butt-coupling. The passive and active waveguides were prepared by RIE process. We also achieved the integrated amplifiers with the high performance and good uniformity by the same fabrication method
Published in:
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
(Volume:1
)
Date of Conference: 30-31 Oct 1995
- Page(s):
- 133 - 134 vol.1
- Meeting Date :
- 30 Oct 1995-31 Oct 1995
- Print ISBN:
- 0-7803-2450-1
- INSPEC Accession Number:
- 5262157
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/LEOS.1995.484804
- Product Type:
- Conference Publications
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