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Spatially resolved photoluminescence characterization and optically induced degradation of In1-xGaxAsyP1-y DH laser material

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4 Author(s)
Johnston, W.D. ; Bell Laboratories, Holmdel, New Jersey 07733 ; Epps, G.Y. ; Nahory, R.E. ; Pollack, M.A.

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We have observed growth‐ and processing‐related defects and optically induced degradation in In1-xGaxAsyP1-y double‐heterostructure material intended for 1.2–1.3‐μm laser diodes. Threshold for the degradation observed decreases with increasing layer thickness, suggesting a relation to strain arising from compositional variation during growth.

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Applied Physics Letters  (Volume:33 ,  Issue: 12 )