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130 mW CW operation of multi-quantum well DFB lasers at 1.3 μm

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4 Author(s)
Chen, T.R. ; Ortel Corp., Alhambra, CA, USA ; Chen, P.C. ; Ungar, J. ; Bar-Chaim, N.

Linear DFB lasers emitting at 1.3 μm are key components for fiber-optic analog transmission applications, such as cable television (CATV) systems. In this letter, we report on the high power operation of strained layer Multi-Quantum Well (S-MQW) InGaAsP/InP DFB lasers at 1.3 μm wavelength. A record 130 mW CW power emitted into a single longitudinal mode has been demonstrated. The lasers used in this work were fabricated by a two step MOCVD/LPE hybrid crystal growth technique. The 1% compressively strained 6 QW separate confinement heterostructure InGaAsP/InP wafer was grown in a low pressure MOCVD reactor. The width of each quantum well is 5 nm and the width of each barrier is 12 nm. Following this, a grating was transferred onto the wafer and a 1.5 μm wide mesa was etched into the wafer. Current blocking layers were then grown by LPE to form a BH laser

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE  (Volume:2 )

Date of Conference:

30 Oct-2 Nov 1995