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Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD

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5 Author(s)
Islam, M.R. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Holmes, A.L. ; Dupuis, R.D. ; Gardner, N.F.
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Data are presented on the luminescence performance of InGaP-InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD. The epitaxial layers are grown in a modified Emcore Model GS3200 UTM reactor at a pressure of 60 Torr. The epitaxial films are deposited at 750 C on GaAs:Si substrates oriented toward the nearest ⟨111⟩A direction. PL peak energies on InGaP bulk layers indicate nearly complete disordering of InGaP on GaAs substrates

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE  (Volume:2 )

Date of Conference:

30 Oct-2 Nov 1995