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A novel all-optical bistable device in a noninterferometric double p-i(ESQW's)-n diode structure

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7 Author(s)
Kwon, O.K. ; Electron. & Telecommun. Res. Inst., Taejeon, South Korea ; Kim, K. ; Hyun, K.S. ; Choi, Y.W.
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A novel all-optical bistable double p-i-n structure (p-i-n-i-p) is demonstrated. Two thin intrinsic regions made of extremely shallow quantum wells (ESQWs) allow both large electric field modulation and strong light absorption, enhancing the optical bistability. Due to the noninterferometric nature, the double p-i(ESQWs)-n structure is not sensitive to thickness fluctuation, unlike the previously reported all-optical bistable device of asymmetric Fabry-Perot cavity structure. Uniform and high performance is realized with a contrast ratio of /spl sim/2.1, a reflectivity change of /spl sim/24%, and a bistable loop width of /spl sim/75% at 1 mW optical power without external bias.

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Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 2 )