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Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide

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4 Author(s)
Yong Cheng ; Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA ; Dapkus, P.Daniel ; MacDougal, Michael H. ; Yang, Gye Mo

High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400/spl deg/C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82%, and a characteristic temperature of 133 K for 1.8 /spl mu/m-wide aperture, 400 /spl mu/m-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 2 )

Date of Publication:

Feb. 1996

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