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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:8 Issue:2 Help

Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

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2 Author(s)
Wada, H. ; Optoelectron. Oki Lab., Real World Comput. Partnership, Tokyo, Japan ; Kamijoh, Takeshi

1.3-/spl mu/m InGaAsP-InP lasers have been successfully fabricated on Si substrates by wafer bonding with heat treatment at 400/spl deg/C. A pressure of 4 kg/cm/sup 2/ has been applied on the wafers before the heat treatment and this pressure application has enabled us to achieve bonding strength required for the device fabrication even when the bonding temperature is as low as 400/spl deg/C. Room-temperature continuous-wave operation with threshold current of 49 mA has been achieved for 7-/spl mu/m-wide mesa lasers.

Published in:
Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 2 )

Date of Publication: Feb. 1996

Page(s):
173 - 175
ISSN :
1041-1135
INSPEC Accession Number:
5197721
Digital Object Identifier :
10.1109/68.484231
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Feb. 1996
Sponsored by :
IEEE Photonics Society

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