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Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the first time. The RIT diodes are advantageous for logic circuits due to the relatively low bias voltages (/spl sim/100 mV) required to attain peak current densities in the mid-10/sup 4/ A/cm/sup 2/ range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height for a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).
Date of Publication: Feb. 1996