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The theoretical study of a novel Si/SiGe structure combining the advantages of buried channel MOS devices and conventional SiGe FET's is presented. A self-consistent one-dimensional Schrodinger-Poisson simulator has been developed to evaluate the gate dependence of electron effective mobility in the zero-field limit. Room temperature peak mobility values greater than 2800 cm/sup 2//Vs are predicted. The proposed structure shows also good turn-on characteristic and linear transconductance behavior, which represents a significant feature in view of possible technology applications.