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Mobility simulation of a novel Si/SiGe FET structure

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4 Author(s)
Abramo, A. ; Dept. of Electron., Bologna Univ., Italy ; Bude, J. ; Venturi, F. ; Pinto, M.R.

The theoretical study of a novel Si/SiGe structure combining the advantages of buried channel MOS devices and conventional SiGe FET's is presented. A self-consistent one-dimensional Schrodinger-Poisson simulator has been developed to evaluate the gate dependence of electron effective mobility in the zero-field limit. Room temperature peak mobility values greater than 2800 cm/sup 2//Vs are predicted. The proposed structure shows also good turn-on characteristic and linear transconductance behavior, which represents a significant feature in view of possible technology applications.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 2 )

Date of Publication:

Feb. 1996

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