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A 23 GHz electrostatic discharge-protected low-noise amplifier (LNA) has been designed and implemented by 45 nm planar bulk-CMOS technology with high-Q above-IC inductors. In the designed LNA, the structure of a one-stage cascode amplifier with source inductive degeneration is used. All high-Q above-IC inductors have been implemented by thin-film wafer-level packaging technology. The fabricated LNA has a good linearity where the input 1 dB compression point (IP-1dB ) is -9.5 dBm and the input referred third-order intercept point ( PIIP3 ) is + 2.25 dBm. It is operated with a 1 V power supply drawing a current of only 3.6 mA. The fabricated LNA has demonstrated a 4 dB noise figure and a 7.1 dB gain at the peak gain frequency of 23 GHz, and it has the highest figure-of-merit. The experimental results have proved the suitability of 45 nm gate length bulk-CMOS devices for RF ICs above 20 GHz.
Date of Publication: May 2009