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GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 \mu m

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4 Author(s)
Bachmann, A. ; Walter Schottky Inst., Tech. Univ. Munchen, Garching ; Kashani-Shirazi, K. ; Arafin, S. ; Amann, Markus-Christian

In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p+-GaSb/n+-InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75degC has been achieved at a wavelength of 2.3 mum. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 3 )

Date of Publication:

May-june 2009

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