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Compact subthreshold slope modelling of short-channel double-gate MOSFETs

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2 Author(s)
Monga, U. ; Dept. of Electron. & Telecommun., & UNIK - University Graduate Centre, Norwegian Univ. of Sci. & Technol., Kjeller ; Fjeldly, T.A.

A precise, compact, subthreshold slope model of short-channel nanoscale double-gate MOSFETs is presented. The model encompasses the effects of device dimensions, built-in voltages and bias voltages on the subthreshold slope. The subthreshold model is based on conformal mapping techniques. Results are in excellent agreement with numerical simulations.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 9 )